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FQD20N06LE Datasheet, MOSFET, Fairchild Semiconductor

FQD20N06LE Datasheet, MOSFET, Fairchild Semiconductor

FQD20N06LE

datasheet Download (Size : 656.13KB)

FQD20N06LE Datasheet
FQD20N06LE

datasheet Download (Size : 656.13KB)

FQD20N06LE Datasheet

FQD20N06LE Features and benefits

FQD20N06LE Features and benefits


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* 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% av.

FQD20N06LE Application

FQD20N06LE Application

such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.

FQD20N06LE Description

FQD20N06LE Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery

FQD20N06LE Page 1 FQD20N06LE Page 2 FQD20N06LE Page 3

TAGS

FQD20N06LE
60V
LOGIC
N-Channel
MOSFET
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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